InAsSb/InAsSbP current-tunable laser with narrow spectral line width
Identifieur interne : 000652 ( Russie/Analysis ); précédent : 000651; suivant : 000653InAsSb/InAsSbP current-tunable laser with narrow spectral line width
Auteurs : RBID : Pascal:03-0363673Descripteurs français
- Pascal (Inist)
- Laser semiconducteur, Diode laser, Etude expérimentale, Laser accordable, Courant seuil, Dépendance température, Spectre absorption, Densité porteur charge, Composé ternaire, Composé quaternaire, Indium arséniure, Indium antimoniure, Indium phosphure, Laser InAsSb/InAsSbP, InAsSb, As In Sb, InAsSbP, As In P Sb, 4255P, Largeur raie spectrale.
English descriptors
- KwdEn :
Abstract
The article describes the manufacture and testing of a new type of semiconductor laser working at low temperatures (12-100 K) in the wavelength range 3200-3300 cm-1. This kind of laser can be tuned in the modal range up to 6 cm-1 and is characterized by a narrow spectral line width (about 7 MHz).
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Pascal:03-0363673Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InAsSb/InAsSbP current-tunable laser with narrow spectral line width</title><author><name sortKey="Civis, S" uniqKey="Civis S">S. Civis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3</s1><s2>18223 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>18223 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Kubat, P" uniqKey="Kubat P">P. Kubat</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3</s1><s2>18223 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>18223 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Zelinger, Z" uniqKey="Zelinger Z">Z. Zelinger</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3</s1><s2>18223 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>18223 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Horka, V" uniqKey="Horka V">V. Horka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3</s1><s2>18223 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>18223 Prague</wicri:noRegion></affiliation></author><author><name sortKey="Imenkov, A N" uniqKey="Imenkov A">A. N. Imenkov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, RAS, 26 Polytechnicheskaya St.</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Kolchanova, N M" uniqKey="Kolchanova N">N. M. Kolchanova</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, RAS, 26 Polytechnicheskaya St.</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Y P" uniqKey="Yakovlev Y">Y. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physico-Technical Institute, RAS, 26 Polytechnicheskaya St.</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0363673</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0363673 INIST</idno><idno type="RBID">Pascal:03-0363673</idno><idno type="wicri:Area/Main/Corpus">00CB82</idno><idno type="wicri:Area/Main/Repository">00D274</idno><idno type="wicri:Area/Russie/Extraction">000652</idno></publicationStmt><seriesStmt><idno type="ISSN">0946-2171</idno><title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title><title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Carrier density</term><term>Experimental study</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Indium phosphides</term><term>Laser diodes</term><term>Quaternary compounds</term><term>Semiconductor lasers</term><term>Spectral line width</term><term>Temperature dependence</term><term>Ternary compounds</term><term>Threshold current</term><term>Tunable lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term><term>Diode laser</term><term>Etude expérimentale</term><term>Laser accordable</term><term>Courant seuil</term><term>Dépendance température</term><term>Spectre absorption</term><term>Densité porteur charge</term><term>Composé ternaire</term><term>Composé quaternaire</term><term>Indium arséniure</term><term>Indium antimoniure</term><term>Indium phosphure</term><term>Laser InAsSb/InAsSbP</term><term>InAsSb</term><term>As In Sb</term><term>InAsSbP</term><term>As In P Sb</term><term>4255P</term><term>Largeur raie spectrale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The article describes the manufacture and testing of a new type of semiconductor laser working at low temperatures (12-100 K) in the wavelength range 3200-3300 cm<sup>-1</sup>. This kind of laser can be tuned in the modal range up to 6 cm<sup>-1</sup> and is characterized by a narrow spectral line width (about 7 MHz).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0946-2171</s0></fA01><fA03 i2="1"><s0>Appl. phys., B Lasers opt. : (Print)</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>InAsSb/InAsSbP current-tunable laser with narrow spectral line width</s1></fA08><fA11 i1="01" i2="1"><s1>CIVIS (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUBAT (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZELINGER (Z.)</s1></fA11><fA11 i1="04" i2="1"><s1>HORKA (V.)</s1></fA11><fA11 i1="05" i2="1"><s1>IMENKOV (A. N.)</s1></fA11><fA11 i1="06" i2="1"><s1>KOLCHANOVA (N. M.)</s1></fA11><fA11 i1="07" i2="1"><s1>YAKOVLEV (Y. P.)</s1></fA11><fA14 i1="01"><s1>J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, Dolejskova 3</s1><s2>18223 Prague</s2><s3>CZE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physico-Technical Institute, RAS, 26 Polytechnicheskaya St.</s1><s2>194021 St. Petersburg</s2><s3>RUS</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>633-637</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194B</s2><s5>354000118536870030</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0363673</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. B, Lasers and optics : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>The article describes the manufacture and testing of a new type of semiconductor laser working at low temperatures (12-100 K) in the wavelength range 3200-3300 cm<sup>-1</sup>. This kind of laser can be tuned in the modal range up to 6 cm<sup>-1</sup> and is characterized by a narrow spectral line width (about 7 MHz).</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diode laser</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Laser diodes</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>08</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0><s5>08</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser accordable</s0><s5>14</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Tunable lasers</s0><s5>14</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Courant seuil</s0><s5>22</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Threshold current</s0><s5>22</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Dépendance température</s0><s5>23</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Temperature dependence</s0><s5>23</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>24</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>24</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Densité porteur charge</s0><s5>31</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Carrier density</s0><s5>31</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>50</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>50</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Composé quaternaire</s0><s5>51</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quaternary compounds</s0><s5>51</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>52</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>52</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2><s5>53</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>53</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>54</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Laser InAsSb/InAsSbP</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>InAsSb</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>As In Sb</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InAsSbP</s0><s4>INC</s4><s5>78</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>As In P Sb</s0><s4>INC</s4><s5>79</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4><s5>91</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Largeur raie spectrale</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Spectral line width</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>258</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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